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| SMD Type Silicon NPN Epitaxial Planar Type 2SC4782 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm High-speed switching. +0.1 2.4-0.1 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 25 20 5 300 200 200 150 -55 to +150 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC4782 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Reverse transfer capacitance Turn-on time Turn-off time Storage time Symbol ICBO IEBO hFE Testconditons VCB = 20V, IE=0 VEB = 2V, IC=0 VCE = 10 V, IC = 1 mA Transistors IC Min Typ Max 0.1 0.1 Unit iA iA 40 0.17 0.76 200 500 2 17 200 0.25 1.0 V V MHz 4 pF ns ns ns VCE(sat) IC = 10mA , IB = 1mA VBE(sat) IC = 10mA , IB = 1mA fT Cre ton toff tstg Refer to the measurment circuit VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz 15 7 hFE Classification Marking Rank hFE P 40 80 DV Q 60 120 R 90 200 2 www.kexin.com.cn |
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